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Simulation of deep level traps effects in quantum well transistor laser

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Abstract

In this paper, we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analyze is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporate the virtual states as a conversion mechanism.

The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region.

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Authors and Affiliations

  1. Young Researchers Club, Arak Branch, Islamic Azad University, Arak, Iran

    Ashkan Horri

  2. Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran

    Rahim Faez

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  1. Ashkan Horri
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  2. Rahim Faez
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Correspondence to Ashkan Horri.

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Horri, A., Faez, R. Simulation of deep level traps effects in quantum well transistor laser. J Comput Electron 12, 812–815 (2013). https://doi.org/10.1007/s10825-013-0495-2

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  • DOI: https://doi.org/10.1007/s10825-013-0495-2

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